Phase change memories (PCMs), based on chalcogenide alloys (mainly Ge2Sb2T e5), are the most promising candidate for the realization of “Storage Class Memories,” which would fill the gap between “operation” and “storage” memories. For improvement of their memory storage, the core-shell nanowire can be grown. In my thesis, I used Metalorganic Chemical Vapor Deposition (MOCVD) to grow GermaniumAntimony-Telluride (GST) (Ge rich)/ Sb2T e3 and Germanium-Telluride (GT)/Sb2T e3 core-shell nanowires that were grown over p-Si (100) and SiO2 substrates. SEM method was used to demonstrate the growth quality of nanowires and their shell. The XRD characterization was used to study the structure of the samples. XPS characterization method studied the interaction between nanowire cores and their shell. Growth of core-shell nanowires in a way the core nanowires preserve inside the shell, discover a procedure to prevent the oxidation of the sample for XPS measurement, and find particular interaction in the interface of the cores and shell nanowires, will be the outcomes of this project.
Le memorie a cambiamento di fase (PCM), basate su leghe calcogenuri (principalmente Ge2Sb2Te5), sono il candidato più promettente per la realizzazione di “Storage Class Memories”, che colmerebbero il divario tra memorie “operative” e “storage”. Per migliorare la loro memoria, il nanowire core-shell può essere cresciuto. Nella mia tesi, ho usato la deposizione chimica da vapore metalorganica (MOCVD) per coltivare nanofili di GermaniumAntimony-Telluride (GST) (Ge rich)/Sb2T e3 e Germanium-Telluride (GT)/Sb2T e3 che sono stati cresciuti su p-Si ( 100) e substrati di SiO2. Il metodo SEM è stato utilizzato per dimostrare la qualità della crescita dei nanofili e del loro guscio. La caratterizzazione XRD è stata utilizzata per studiare la struttura dei campioni. Il metodo di caratterizzazione XPS ha studiato l'interazione tra i nuclei dei nanofili e il loro guscio. La crescita dei nanofili core-shell in un modo che i nanowire core conservano all'interno del guscio, scoprire una procedura per prevenire l'ossidazione del campione per la misurazione XPS e trovare una particolare interazione nell'interfaccia dei nanofili core e shell, saranno i risultati di questo progetto.
Metalorganic chemical vapor deposition (MOCVD) and characterization of nanostructured phase change materials for memory applications
MIRSHOKRAEE, SEYED ARIANA
2020/2021
Abstract
Phase change memories (PCMs), based on chalcogenide alloys (mainly Ge2Sb2T e5), are the most promising candidate for the realization of “Storage Class Memories,” which would fill the gap between “operation” and “storage” memories. For improvement of their memory storage, the core-shell nanowire can be grown. In my thesis, I used Metalorganic Chemical Vapor Deposition (MOCVD) to grow GermaniumAntimony-Telluride (GST) (Ge rich)/ Sb2T e3 and Germanium-Telluride (GT)/Sb2T e3 core-shell nanowires that were grown over p-Si (100) and SiO2 substrates. SEM method was used to demonstrate the growth quality of nanowires and their shell. The XRD characterization was used to study the structure of the samples. XPS characterization method studied the interaction between nanowire cores and their shell. Growth of core-shell nanowires in a way the core nanowires preserve inside the shell, discover a procedure to prevent the oxidation of the sample for XPS measurement, and find particular interaction in the interface of the cores and shell nanowires, will be the outcomes of this project.File | Dimensione | Formato | |
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Ariana_Thesis_Final.pdf
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https://hdl.handle.net/10589/179173