Modern nuclear physics relies on high-intensity radioactive ion beams to access exotic nuclei. At the Facility for Antiproton and Ion Research (FAIR) at GSI, the Superconducting Fragment Separator (Super-FRS) produces short-lived exotic nuclei through heavy-ion fragmentation. In the Super-FRS high-energy branch, fragments are thermalized in the High-Areal-Density Orthogonal-extraction Cryogenic Stopping Cell (HADO-CSC). Its operation requires the presence of integrated electronics in a region exposed to an intense secondary radiation field arising from beam interactions with beamline components, producing a mixed field of charged hadrons, neutrons, and photons. This thesis characterizes the radiation environment in the HADO-CSC region and assesses damage risks to electronics. A FLUKA Monte-Carlo model of the beamline and stopping cell is developed. The study focuses on absorbed dose and neutron fluence to estimate, respectively, total irradiation damage (TID) and displacement damage (DD). The most relevant contribution to the dose in the locations of interest is given by protons, between 61% and 68% depending on the location of the devices. Absorbed dose is 1.33 times higher when the electronics is closer to the beamline; neutron fluence is instead 2.03 times higher on the opposite side. For typical FAIR irradiation scenarios, the reference values for displacement damage are met in more than 10^5 years, thus not representing a primary concern. The lowest representative range with respect to total irradiation damage among electronic devices, which refers to the threshold voltage decrease in MOSFETs, is reached considering a time interval of 6 to 18 years. When considering the planned service life of the Ion Catcher setup, this result leads to the conclusion that additional mitigation strategies are required to reduce the impact of TID and extend the system’s longevity. Consequently, simple shielding elements have been addressed to reduce the dose. In particular, a compact aluminum block adjacent to the degrader provides a 73% reduction. These findings provide quantitative guidance for the placement and protection of electronic devices around the stopping cell, ensuring long-term reliable operation.
La fisica nucleare moderna si affida a fasci di ioni radioattivi di alta intensità per accedere a nuclei esotici. Presso la Facility for Antiproton and Ion Research (FAIR) al GSI, il Superconducting Fragment Separator (Super-FRS) produce nuclei esotici a vita breve mediante frammentazione di ioni pesanti. Nel ramo ad alta energia del Super-FRS, i frammenti sono termalizzati nella High-Areal-Density Orthogonal-extraction Cryogenic Stopping Cell (HADO-CSC). Il suo funzionamento richiede la presenza di componenti elettronici in una regione esposta a un intenso campo di radiazione secondaria generato dalle interazioni del fascio con i componenti della beamline, producendo un campo misto di adroni carichi, neutroni e fotoni. Questa tesi caratterizza il campo di radiazioni nella regione della HADO-CSC e valuta i rischi di danno per l’elettronica. Viene sviluppato un modello tramite codice Monte-Carlo FLUKA della beamline e della stopping cell. Lo studio si concentra su dose assorbita e fluenza neutronica per stimare rispettivamente il Total Irradiation Damage (TID) e il Displacement Damage (DD). Il contributo maggiore alla dose è dato dai protoni (61–68% a seconda della posizione dell’elettronica). La dose è 1.33 volte più alta quando l’elettronica è vicina alla beamline; la fluenza neutronica è invece 2.03 volte più alta sul lato opposto. Considerando scenari sperimentali tipici presso FAIR, i valori di riferimento per il DD sono raggiunti solo dopo più di 10^5 anni, non rappresentando perciò un problema primario. Relativamente al TID, il range di valori più bassi tra tutti i dispositivi, associati all’abbassamento della tensione di soglia dei MOSFET, vengono raggiunti in un periodo di tempo compreso tra 6 e 18 anni. Considerando la vita operativa prevista per Ion Catcher, questo risultato porta a concludere che sia necessaria l’implementazione di ulteriori strategie di mitigazione per ridurre l’impatto del TID e aumentare la longevità dei dispositivi. Di conseguenza, vengono esaminate semplici soluzioni di schermatura per ridurre la dose assorbita. In particolare, un blocco schermante in alluminio posizionato immediatamente a monte del degrader fornisce una riduzione del 73%. Questi risultati offrono indicazioni quantitative per il posizionamento e la protezione dell’elettronica attorno alla stopping cell, assicurando un funzionamento affidabile a lungo termine.
Numerical study and optimization of radiation damage of the Super-FRS Ion Catcher setup
Piazza, Tommaso
2025/2026
Abstract
Modern nuclear physics relies on high-intensity radioactive ion beams to access exotic nuclei. At the Facility for Antiproton and Ion Research (FAIR) at GSI, the Superconducting Fragment Separator (Super-FRS) produces short-lived exotic nuclei through heavy-ion fragmentation. In the Super-FRS high-energy branch, fragments are thermalized in the High-Areal-Density Orthogonal-extraction Cryogenic Stopping Cell (HADO-CSC). Its operation requires the presence of integrated electronics in a region exposed to an intense secondary radiation field arising from beam interactions with beamline components, producing a mixed field of charged hadrons, neutrons, and photons. This thesis characterizes the radiation environment in the HADO-CSC region and assesses damage risks to electronics. A FLUKA Monte-Carlo model of the beamline and stopping cell is developed. The study focuses on absorbed dose and neutron fluence to estimate, respectively, total irradiation damage (TID) and displacement damage (DD). The most relevant contribution to the dose in the locations of interest is given by protons, between 61% and 68% depending on the location of the devices. Absorbed dose is 1.33 times higher when the electronics is closer to the beamline; neutron fluence is instead 2.03 times higher on the opposite side. For typical FAIR irradiation scenarios, the reference values for displacement damage are met in more than 10^5 years, thus not representing a primary concern. The lowest representative range with respect to total irradiation damage among electronic devices, which refers to the threshold voltage decrease in MOSFETs, is reached considering a time interval of 6 to 18 years. When considering the planned service life of the Ion Catcher setup, this result leads to the conclusion that additional mitigation strategies are required to reduce the impact of TID and extend the system’s longevity. Consequently, simple shielding elements have been addressed to reduce the dose. In particular, a compact aluminum block adjacent to the degrader provides a 73% reduction. These findings provide quantitative guidance for the placement and protection of electronic devices around the stopping cell, ensuring long-term reliable operation.| File | Dimensione | Formato | |
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2026_7_Piazza_Executive_Summary.pdf
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Descrizione: Executive Summary
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2026_7_Piazza_Thesis.pdf
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Descrizione: Thesis
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https://hdl.handle.net/10589/260258