Multi-objective optimization and parameter extraction of power diode and IGBT

Validation of the model of power diode and Insulated Gate Bipolar Transistor are the main topic of the following project. Single and Multi- Objective Optimization are introduced for the search of the ’optimum’ parameter values. CMA-ES and NGSA II strategy are introduced as basic algorithms of the Optimization process. Sensitivity Analysis is done to accurately understand the effects of the model parameters on the output responses of the Lauritzen model (of the power diode and IGBT) and to define a Extraction Parameter procedure. Results of IGBT are shown respectively for transfer, output and gate-charge produced by the Lauritzen model defined by the Extraction Parameter and of power diode respectively for dc and reverse recovery.